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Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO
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Document Title
Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO
Author
Manyam J, Ton-That C, Phillips MR
Name from Authors Collection
Affiliations
National Science & Technology Development Agency - Thailand; National Nanotechnology Center (NANOTEC); University of Technology Sydney
Type
Article
Source Title
JOURNAL OF APPLIED PHYSICS
ISSN
0021-8979
Year
2020
Volume
127
Issue
7
Open Access
Green Submitted
Publisher
AMER INST PHYSICS
DOI
10.1063/1.5134555
Format
Abstract
Internal electric fields can have a significant effect on the behavior of charged defects, dopants, and impurities in operating electronic devices that can adversely impact on their long-term performance and reliability. In this paper, we investigate the redistribution of charged centers in single crystal m-plane ZnO under the action of a DC electric field at 873K using in-plane and in-depth spatially resolved cathodoluminescence (CL) spectroscopy. The CL intensities of the ultra-violet near band edge (NBE) emission at 3.28eV and green luminescence (GL) at 2.39eV were observed to both uniformly increase on the anode side of the electrode gap. Conversely, toward the cathode, the NBE and GL steadily decrease and increase, respectively. The GL quenched after hydrogen donor doping, confirming that the emission is related to acceptor-like centers. Based on the electro-migration and hydrogen doping results, the GL is attributed to radiative recombination involving ZZn pairs. The intensity of an orange luminescence centered at 2.01eV was unaffected by the electric field and is assigned to substitutional Li acceptors. Published under license by AIP Publishing.
Industrial Classification
Knowledge Taxonomy Level 1
Knowledge Taxonomy Level 2
Knowledge Taxonomy Level 3
Funding Sponsor
Australian Endeavour research fellowship program, Australian Government; National Science and Technology Development Agency (NSTDA), Thailand [P1450015]
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Copyright
Rights
Authors
Publication Source
WOS