Chulalongkorn University; Naresuan University; Chulalongkorn University; National Science & Technology Development Agency - Thailand; National Electronics & Computer Technology Center (NECTEC); National Science & Technology Development Agency - Thailand; National Science & Technology Development Agency - Thailand; National Metal & Materials Technology Center (MTEC)
Type
Article
Source Title
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
ISSN
1862-6300
Year
2019
Volume
216
Issue
1
Page
-
Open Access
Bronze
Publisher
WILEY-V C H VERLAG GMBH
DOI
10.1002/pssa.201800498
Format
PDF
Abstract
In this study, the growth and photoluminescence (PL) properties of InSb/GaSb nano-stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high-energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski-Krastanov mode and results in nano-stripe formation. The obtained nano-stripes have rectangular-based structure with the height of 25.2 +/- 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano-stripes shows the emission peak at approximate to 1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of approximate to 0.24 in nominally grown InSb/GaSb nano-stripe is estimated. Power-dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of approximate to 20 meV from InSb nano-stripe emission is extracted from the temperature-dependent PL spectroscopy.
National Science and Technology Development Agency (NSTDA), Thailand [FDA-CO-2558-1407-TH]; Asian Office of Aerospace Research and Development (AOARD) Grant; Office of Naval Research Global (ONRG) [FA 2386-16-1-4003]; Thailand Research Fund [DPG5380002]; NANOTEC, NSTDA, Thailand [RES_50_016_21_016]; Chulalongkorn University
