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High verticality vapor-liquid-solid growth of GaAs0.99Bi0.01 nanowires using Ga-Bi assisted catalytic droplets
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Document Title
High verticality vapor-liquid-solid growth of GaAs0.99Bi0.01 nanowires using Ga-Bi assisted catalytic droplets
Author
Himwas C. Yordsri V. Thanachayanont C. Chomdech S. Pumee W. Panyakeow S. Kanjanachuchai S.
Affiliations
Semiconductor Device Research Laboratory Department of Electrical Engineering Faculty of Engineering Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand; National Metal and Materials Technology Center Thailand Science Park 114 Paholyothin Rd Klong 1 Pathumthani 12120 Klong Luang Thailand
Type
Article
Source Title
Nanoscale Advances
ISSN
25160230
Year
2023
Volume
6
Issue
3
Page
846-854
Open Access
All Open Access Gold Green
Publisher
Royal Society of Chemistry
DOI
10.1039/d3na00428g
Abstract
GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near- and mid-infrared wavelengths due to the optical properties of the Bi-containing compound and the nanowire structure benefits. In general synthesizing the GaAsBi NWs results in uncontrollable metamorphic structures and spontaneous Bi-containing droplets. Here we explore the potential of using the droplets as catalysts to form GaAsBi nanowires (hence the vapor-liquid-solid growth mechanism) on GaAs (111) substrates by molecular beam epitaxy. The GaAsBi NWs experience a two-step growth: Bi droplet deposition and GaAsBi nanowire growth. The optimal droplet deposition temperature (250 ?C) is defined based on the droplet morphologies. The gradation of growth temperatures of GaAsBi NWs to 250 ?C 300 ?C and 350 ?C results in high-aspect-ratio NWs tilted NWs and low-aspect-ratio NWs respectively. Structural investigation shows that the optimal (low-aspect-ratio) NW has the composition of GaAs0.99Bi0.01 with the catalytic droplet of Ga0.99Bi0.01 decorated on its tip. Detailed structural analyses show that the Bi content progressively increases from the NW stem to the wire-substrate interface. The satisfying GaAsBi NW morphology does not warrant the expected superior optical results. Photoluminescence study suggests that the NW has a strong carrier thermalization from the NW stem to the wire-substrate interface influenced by the graded NW growth temperature profile. ? 2024 The Royal Society of Chemistry.
Industrial Classification
Knowledge Taxonomy Level 1
Knowledge Taxonomy Level 2
Knowledge Taxonomy Level 3
License
CC BY
Rights
The Royal Society of Chemistry
Publication Source
WOS