• Temperature-dependent electrical transport Hall effect and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials

  • Back
    bibtex

Document Title

Temperature-dependent electrical transport Hall effect and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials

Author

Maneesai K. Silakaew K. Khammahong S. Phrompet C. Sriwong C. Thanachayanont C. Ruttanapun C.

Affiliations

Department of Physics School of Science King Mongkut's Institute of Technology Ladkrabang Chalongkrung Road Ladkrabang Bangkok 10520 Thailand; Smart Materials Research and Innovation Unit School of Science King Mongkut's Institute of Technology Ladkrabang Chalongkrung Road Ladkrabang Bangkok 10520 Thailand; Center of Excellence in Smart Materials Research and Innovation King Mongkut's Institute of Technology Ladkrabang Chalongkrung Road Ladkrabang Bangkok 10520 Thailand; Thailand Center of Excellence in Physics Ministry of Higher Education Science Research and Innovation 328 Si Ayutthaya Road Bangkok 10400 Thailand; College of Innovation and Industrial Management King Mongkut's Institute of Technology Ladkrabang Chalongkrung Road Ladkrabang Bangkok 10520 Thailand; Department of Chemistry School of Science King Mongkut's Institute of Technology Ladkrabang Chalongkrung Road Ladkrabang Bangkok 10520 Thailand; National Metal and Materials Technology Center 114 Thailand Science Park Paholyothin Rd. Klong 1 Klong Luang 12120 Thailand; Department of Physics School of Science King Mongkut s Institute of Technology Ladkrabang Chalongkrung Road Ladkrabang Bangkok 10520 Thailand

Type

Article

Source Title

AIP Advances

ISSN

21583226

Year

2023

Volume

13

Issue

3

Open Access

All Open Access Gold

Publisher

American Institute of Physics Inc.

DOI

10.1063/5.0142476

Abstract

The temperature-dependent electrical transport Hall effect and Seebeck properties of bulk-reduced graphene oxide (rGO) prepared by a chemical reduction process were investigated in a temperature range of 310-475 K. The bulk rGO contained bipolar charge carriers with p-type to n-type switching at a temperature of 420 K. The materials illustrated a p-type characteristic in the temperature range of 310-420 K and n-type characteristic in the temperature range of 420-475 K. The charge transport mechanism was that of the graphene-derived 2D material in the p-type regime and governed by polaronic charge carriers. ? 2023 Author(s).

License

CC BY

Rights

Authors

Publication Source

WOS

Continue browsing