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A study of the electrical and optical properties of AZO thin film by controlling pulse frequency of HiPIMS
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Document Title
A study of the electrical and optical properties of AZO thin film by controlling pulse frequency of HiPIMS
Author
Nuchuay P., Laongwan C., Promcham W., Somboonsaksri P., Kalasung S., Chananonnawathorn C., Eiamchai P., Patthanasettakul V., Promjantuk C., Seawsakul K., Nuntawong N., Horprathumb M., Limwichean S.
Affiliations
Program of Industrial Electrical Technology, Faculty of Science and Technology, Suratthani Rajabhat University, Surat Thani, Mueang, 841000, Thailand; National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency, Pathum Thani, 12120, Thailand; Department of physics, Faculty of Science and Technology, Nakhon Ratchasima Rajabhat University, Nakhon Ratchasima Province30000, Thailand; Educational Research Development and Demonstration Institute, Srinakharinwirot University, Nakhon Nayok Province, Ongkharak, 26120, Thailand
Type
Article
Source Title
Journal of Metals, Materials and Minerals
ISSN
8576149
Year
2023
Volume
33
Issue
2
Page
103-107
Open Access
All Open Access, Hybrid Gold
Publisher
Chulalognkorn University
DOI
10.55713/jmmm.v33i2.1696
Format
Abstract
The transparent conductive oxide (TCO) which is AZO thin film was prepared by controlling pulse frequency at 100 Hz to 900 Hz using high-power impulse magnetron sputtering (HiPIMS). All samples were deposited on silicon (100) and glass slide substrates which the thickness was kept constant at 400 nm. The surface morphology was investigated by field-emission scanning electron microscope (FE-SEM), crystallinity by Grazing Incidence X-ray Diffraction (GI-XRD), optical transparency by UV- Vis-NIR spectrophotometry, and electrical properties using Hall effect instrument. It was found that the AZO films exhibited dense columnar structure. The GI-XRD patterns of AZO films demonstrated the crystal growth direction which was preferred the hexagonal wurtzite structure at (002) and (103) planes. The AZO film prepared by using 700 Hz of frequency (duty cycle 7%) showed the average visible transmittance (Tavg) at 82% in the visible region (380 nm to 780 nm). Additionally, the resistivity, high mobility and carrier concentration of AZO film were found to be 3.0 ? 10-3 ?.cm-1, 10.53 cmWs-1 and 1.82 ? 1020-cm'3, respectively. The fabrication of AZO film presented excellent electrical and optical properties which could be applied in several optoelectronic applications. ? (2023), All Rights Reserved.
Keyword
AZO thin film | HiPIMS | Pulse frequency | Transparent conductive oxides
Industrial Classification
Knowledge Taxonomy Level 1
Knowledge Taxonomy Level 2
Knowledge Taxonomy Level 3
License
CC BY-NC-ND
Rights
Authors
Publication Source
WOS