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Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation
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Document Title
Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation
Author
Phakkhawan A, Sakulkalavek A, Buranurak S, Klangtakai P, Pangza K, Jangsawang N, Nasompag S, Horprathum M, Kijamnajsuk S, Sanorpim S
Name from Authors Collection
Affiliations
King Mongkuts Institute of Technology Ladkrabang; Khon Kaen University; Khon Kaen University; Chiang Mai University; Asian Institute of Technology; Khon Kaen University; National Science & Technology Development Agency - Thailand; National Electronics & Computer Technology Center (NECTEC); National Science & Technology Development Agency - Thailand; National Metal & Materials Technology Center (MTEC); Chulalongkorn University
Type
Article
Source Title
MATERIALS
Year
2022
Volume
15
Issue
17
Open Access
Green Published, gold
Publisher
MDPI
DOI
10.3390/ma15175897
Format
Abstract
A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0-2.0 MGy. The study showed high-energy electron bombardments caused roughening on the surface of the irradiated GaAs samples. At the maximum delivered energy of 20 MeV electrons, the observed root mean square (RMS) roughness increased from 5.993 (0.0 MGy) to 14.944 nm (2.0 MGy). The increased RMS roughness with radiation doses was consistent with an increased hole size of incident electrons on the GaAs surface from 0.015 (0.5 MGy) to 0.066 nm (2.0 MGy) at 20 MeV electrons. Interestingly, roughness on the surface of irradiated GaAs samples affected an increase in material wettability. The study also observed the changes in bandgap energy of GaAs samples after irradiation with 10, 15, and 20 MeV electrons. The band gap energy was found in the 1.364 to 1.397 eV range, and the observed intense UV-VIS spectra were higher than in non-irradiated samples. The results revealed an increase of light absorption in irradiated GaAs samples to be higher than in original-based samples.
Keyword
electron irradiation | GaAs | high-energy particle | Hydrophilic
Funding Sponsor
Research Network NANOTEC (RNN) program of the National Nanotechnology Center (NANOTEC); NSTDA, Ministry of Higher Education, Science, Research, and Innovation (MHESI); Khon Kaen University, Thailand; National Research Council of Thailand (NRCT) [6100068]; Research and Graduate Studies, Khon Kaen University
License
CC BY
Rights
Authors
Publication Source
WOS