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Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence
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Document Title
Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence
Author
Krajangsang T, Moollakorn A, Inthisang S, Limmanee A, Sriprapha K, Boriraksantikul N, Taratiwat T, Akarapanjavit N, Sritharathikhun J
Name from Authors Collection
Affiliations
National Science & Technology Development Agency - Thailand; National Electronics & Computer Technology Center (NECTEC); PTT Public Company Limited
Type
Article
Source Title
INTERNATIONAL JOURNAL OF PHOTOENERGY
ISSN
1110-662X
Year
2014
Volume
2014
Open Access
gold, Green Submitted
Publisher
HINDAWI LTD
DOI
10.1155/2014/251508
Format
Abstract
Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (V-oc), fill factor (FF), and temperature coefficient (TC) of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (V-oc = 700 mV, J(sc) = 33.5 mA/cm(2), and FF = 0.79). The TC normalized for this c-Si-HJ solar cell efficiency was 0.301%/degrees C.
License
CC-BY
Rights
Authors
Publication Source
WOS