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Wide-Gap p-μc-Si1-xOx:H films and their application to amorphous silicon solar cells
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Document Title
Wide-Gap p-μc-Si1-xOx:H films and their application to amorphous silicon solar cells
Author
Krajangsang T., Inthisang S., Hongsingthong A., Limmanee A., Sritharathikhun J., Sriprapha K.
Name from Authors Collection
Affiliations
Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, Thailand
Type
Article
Source Title
International Journal of Photoenergy
ISSN
1110662X
Year
2013
Volume
2013
Open Access
All Open Access, Gold
DOI
10.1155/2013/958326
Format
Abstract
Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xO x:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO 2/SiH4 ratio and H2/SiH4 dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xO x:H is promising to use as window layer in a-Si:H solar cells. © 2013 Taweewat Krajangsang et al.
Industrial Classification
Knowledge Taxonomy Level 1
Knowledge Taxonomy Level 2
Knowledge Taxonomy Level 3
License
N/A
Rights
N/A
Publication Source
Scopus